Research - Faculty
Charles Black Evans Professor Gonzalo Arce
Inverse Lithography
Overview
Current Projects
- Compressive sensing in imaging, sensor networks, and UWB radios
- Inverse Lithography
- Multi-tone blue noise dithering
Current funding
Intel
Group Staff
Graduate Student
Xu Ma
Collaborators
Dennis Prather (University of Delaware)
Christof Krautschik (Intel)
Office: Evans 312
Phone: 302-831-1493
Fax: 302-831-1366
Similar to photographic printing, optical lithography uses light to expose masks which include transparent and opaque regions. The transmitted energy creates patterns on the underneath wafer. Due to resolution limits of optical lithographic systems, the resolution enhancement techniques (RET) are applied to compensate and minimize the pattern distortions as they are projected onto semiconductor wafers. RET mainly includes three kinds of techniques: optical proximity correction (OPC), phase-shifting masks (PSM), and off-axis illumination (OAI). Inverse lithography research at University of Delaware aims at developing gradient-based RET optimization methods to design mask patterns which effectively reduce the pattern distortions on the wafer. We are also studying double exposure optimization methods, in which the wafers are exposed twice with different optimized mask patterns.
Recent publications
Xu Ma and Gonzalo R. Arce, "Generalized Inverse Lithography Methods for Phase-Shifting Mask Design," Optics Express, Vol. 15, Issue 23, pp.15066-15079, 2007.
Xu Ma and Gonzalo R. Arce, "Generalized Inverse Lithography Methods for Phase-Shifting Mask Design," in Proceedings of SPIE, vol. 65200U, San Jose, CA, March, 2007.
