Research - Faculty
Charles Black Evans Professor James Kolodzey
Broadband Silicon-Based Quantum Dot Absorption Materials
Overview
Current Projects
- Broadband Silicon-Based Quantum Dot Absorption Materials
- Dilute Nitride Technology for Infrared Detectors
- Fabrication of Light Emitters Based on Tin-Germanium Alloys
- Germanium-Based Solar Cells for Long Wavelength Sensitivity
- Spintronic Sensors and Microwave Phase Detection
- Terahertz Spectroscopy of Doped Nanostructures
Current funding
National Science Foundation, SBIR grant with QuantTera
Group Staff
Graduate Student
John LaRocco
Collaborators
Dr. Matt Kim
Office: Evans 203
Phone: 302-831-1164
We are working with a small business, QuantTera, to develop silicon-germanium based quantum dot optoelectronic materials. The proposed quantum dot nanostructures operate over a wide range of optical wavelengths by virtue of their composition and size distribution are capable of exhibiting diverse controllable and predictable physical responses when subjected to various external conditions. This innovative nanomaterial will be multifunctional which would allow the development of broadly absorbing solar cells on silicon with a single junction technology for alternative energy applications or the development of highly efficient broadband photo-detectors for telecommunications applications. Using layers of silicon-germanium quantum dots that were grown by molecular beam epitaxy, we have fabricated light emitters that operate at low temperatures and up to room temperature.
