Research
Photonics & Electromagnetics
Broadband Silicon-Based Quantum Dot Absorption Materials
James Kolodzey
- Evolutionary optimization of electromagnetic devices
- Fabrication of Light Emitters Based on Tin-Germanium Alloys
- Devices and Imaging in the High-Terahertz Band
- Antenna Coupled Nano-Photonic Waveguides for MMW FPAs
- Optical biopsy & single-cell spectroscopy
- 50% Efficient Solar Cells
- Electro-optical properties of carbon nanostructures
- High-reliability Vertical Cavity Surface Emitting Lasers (VCSEL's) and VCSEL arrays
- Integration of Optoelectronics and Optical Networks in Advanced Fiberglass/Resin Composites
- Micromechanical Large-Area Modulators for Free-space Optical Communication
- Silicon-based light emitters
- Time-domain integral equation methods for the solution of Maxwell's Equations
- Design of 2D Read-out Integrated Circuit for 3-D Laser-radar Imaging Systems
- Spintronic Sensors and Microwave Phase Detection
- Broadband Silicon-Based Quantum Dot Absorption Materials
- Terahertz Spectroscopy of Doped Nanostructures
- Dilute Nitride Technology for Infrared Detectors
- Germanium-Based Solar Cells for Long Wavelength Sensitivity
Current funding
National Science Foundation, SBIR grant with QuantTera
Group Staff
Graduate Student
John LaRocco
Collaborators
Dr. Matt Kim
We are working with a small business, QuantTera, to develop silicon-germanium based quantum dot optoelectronic materials. The proposed quantum dot nanostructures operate over a wide range of optical wavelengths by virtue of their composition and size distribution are capable of exhibiting diverse controllable and predictable physical responses when subjected to various external conditions. This innovative nanomaterial will be multifunctional which would allow the development of broadly absorbing solar cells on silicon with a single junction technology for alternative energy applications or the development of highly efficient broadband photo-detectors for telecommunications applications. Using layers of silicon-germanium quantum dots that were grown by molecular beam epitaxy, we have fabricated light emitters that operate at low temperatures and up to room temperature.
