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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
MBE – Custom EPI-620
MBE – Custom EPI-620
Cross-sectional TEM image. The 16 periods of 1.35 nm Si0.70Ge0.30 quantum wells and 2.5 nm Si barriers are clearly resolved.
This MBE system is a custom EPI-620 Molecular Beam Epitaxy System consisting of a growth and introduction chamber. Both growth and introduction chamber are pumped by a CTI Cryogenics CT-8F cryopump powered by a CTI Cryogenics 9600 cryo compressor. The vacuum system is monitored by ion gauges and an RGA (Residual Gas Analyzer). The growth chamber is also pumped by a Varian 400 L/sec. ion pump.
The sources include Ge, B, and GaP (for phosphorus doping) solid source effusion cells, and a Si e-beam source. The MBE is capable of growth on 3” substrates. RHEED (Reflection High-Energy Electron Diffraction) and a growth monitor are employed for in situ characterization of grown layers.
