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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
MBE – Gen III
MBE – Gen III
AFM images of InAs QDs grown on the GaAs (5 ML) / GaAs1-xSbx (5nm) buffer layers with various Sb compositions at 0 (a), 7% (b), 19% (c), and 23% (d), respectively.
Histograms of dot (island) measured from digitized AFM images and fit with a Gaussian curve for sample A (0% Sb) and sample B (11% Sb), respectively. The dots in sample B show a remarkably sharp distribution in comparison with that in sample A.
The Applied EPI-GenIII Molecular Beam Epitaxy System allows III-V growth on 2", 3" and 4" wafers. In-situ growth rate control and crystal quality monitoring is obtained through a Reflective High Energy Electron Diffraction (RHEED) system. Ultra-high vacuum is maintained in the Growth chamber through two cryo pumps and an ion pump in addition to a liquid nitrogen shroud. Cryo pumped Intro and Exit chamber allow rapid loading and unloading of the system, and an ion pumped Buffer chamber allows substrate preparation and degassing prior to entering the Growth chamber.
Materials available are Ga(x2), Al(x2), In(x2), Si (dopant) through thermal effusion cells, as well as valved cracker sources for As, Sb and P. CBr as a gas source is also available for doping purposes.
