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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
MBE – NexGEN Gen II
Drawing of the NexGEN MBE main chamber. Courtesy of OSEMI, Inc. 
Transmission electron micrograph of ErAs/InGaAs metal/semiconductor nanocomposite. Image from D. Klenov in J.M. Zide, et. al. Appl. Phys. Lett. 87, 112103 (2005).
The OSEMI NexGEN Molecular Beam Epitaxy (MBE) system allows the growth of III-V semiconductors and related materials on 2” and 3” wafers with exquisite precision and control. The system is equipped with optical flux monitoring (OFM) for in situ measurement of growth flux and includes an internal flux chopper for lock-in measurements. The system is also equipped for reflection high-energy electron diffraction (RHEED) for measurements of surface morphology and can be expanded to included RHEED-TRAX for real-time measurement of composition. Temperature measurement techniques include pyrometry and band-edge thermometry (in transmission). Sources include a valved gallium cell (allowing real-time control of flux when used with OFM), aluminum, indium, arsenic (valved cracker cell), two rare-earth sources (details available upon request), and a normal complement of dopants for both n-type and p-type materials. The system is designed to allow the include of several additional sources, and a three-chamber design with several ultra-high vacuum (UHV) pumping technologies allows extraordinarily high-quality material to be grown.
The NexGEN MBE is operated by the Epitaxial Materials Engineering Research Group (EMERG) and is currently focused on novel materials and nanocomposites for a variety of device applications.
