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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
SVTA III-V Molecular Beam Epitaxy System
Photo of the SVTA III-V MBE system.
Characterization data for samples grown using this system
The SVTA III-V MBE growth system allows growth of several different epitaxial compound semiconductors, including quantum wells and quantum dots, on a variety of substrate materials.
Features:
- Load Chamber for loading and preheating of loaded wafer (up to 150C), and for unloading of grown structures. Loading cassette of vertical type allows load simultaneously 6 wafers (face down) of different sizes: ¼, ½ and entire 2” and/or 3” wafers. The buffer chamber has the second preheating stage (up to 450 – 500C). With Ion pump, pressure under idle conditions is 6–7 x 10-11 Torr;
- In the growth chamber there is a growth stage with the wafer holder and resistance heater (up to 800C). In this chamber there are As valved cracker (VEECO) and 7 effusion cells (SVTA and VEECO): Be, Si, Al, In, Sb, Ga and GaTe. Al, Ga In and Sb are the main components, while Be, Si and GaTe are doping substances.
- There are two Liquid Nitrogen Shrouds in the Growth Chamber. Together with a Cryo pump it maintains pressure between 2 x 10-10 and 5 x 10-7 Torr, depending on growth cell conditions (mostly As conditions).
- There are RHEED and Infrared Pyrometer for in-situ characterization of growth conditions.
- Growth/substrate material combinations include:
- AlGaAs and InGaAs on GaAs wafers
- AlGaSb, AlGaAsSb and InGaAsSb on GaSb wafers
- InGa(Al)As on InP
- InAs QDs and/or InGaAs QDs on GaAs and InP wafers
