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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
Samco PECVD PD-220N
A photo of the Samco PECVD PD-220N
A TEM image of a Silicon/Silicon Dioxide superlattice deposited using our PECVD system—Si layers are ~5nm thick.
Our Plasma Enhanced Chemical Vapor Deposition (PECVD) system is a Samco model PD-220N. This is a CVD system designed for low temperature (typically ~200-400°C) deposition of silicon based materials (SiOx, SiN, SiOxNy, and a-Si:H). This tool is capable of producing thin films with excellent refractive index and thickness uniformity over an 8 inch diameter. The system is very easy to use with a computerized touch screen interface and is ideal for research and development applications.
Provides the capacity to process five 3" wafers, three 4" wafers, or one 8" wafer per cycle
Fully automatic "one-button" operation time with full manual override
Supports the continuous execution of multiple processes such as cleaning process followed by deposition for greater process flexibility
Capable of depositing up to 5µm of films before requiring a cleaning process
Recipes developed for deposition of silicon oxide, silicon nitride, and amorphous silicon
Uniform deposition rates ranging from 15 nm/min to 80 nm/min
Supports deposition temperatures up to 400°C
Available precursor gases include:
- Silane (SiH4)
- Ammonia (NH3)
- Nitrous Oxide (N2O)
- Tetraethyloxysilane (TEOS)
- Oxygen (O2)
- Nitrogen (N2)
- Argon (Ar)
- Hexafluorethane (C2F6)
