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Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
UHV CVD-300
The Low Temperature CVD system is a Leybold Sirius Low-Temperature Epitaxy UHV CVD-300 system. The CVD-300 is capable of growing group IV semiconductors, specifically Si and Ge, with dopants of phosphorous and boron on 3 to 8” substrates.
UHV CVD-300
The source gases include
- Silane (SiH4)
- Germane (GeH4)
- Diborane (B2H6)
- Phosphine (PH3)
- and Hydrogen as a carrier gas.
A double-walled quartz glass reactor tube consists of a 300 mm thermal flat zone with uniformity and stability better than +/- 1o C. The Ultra High Vacuum (UHV) is achieved by a turbomolecular pump, roots blower, and a mechanical pump. The loading chamber is pumped to UHV by a turbomolecular pump backed by a mechanical rotary pump. Wafers are loaded into the growth chamber via a quartz boat mechanically pushed into and out of the reactor chamber. Operation is controlled by a Programmable Logic Controller (PLC) and a PC computer acting as the main control center.
