Research Centers & Facilities
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Nanofabrication Facility
Capabilities & Equipment
Deposition Systems
- Denton Vacuum Discovery 18 Deposition System
- The Denton Vacuum Discovery 18 Deposition System, designed for thin film processing, provides dual sources and the ability to heat, apply RF bias, and rotate the substrate.
- MBE – Custom EPI-620
- The custom EPI-620 Molecular Beam Epitaxy System consists of a growth and introduction chamber. It includes solid source effusion cells and a Si e-beam source.
- MBE – Gen III
- The Applied EPI-GenIII Molecular Beam Epitaxy System allows III-V growth on 2", 3" and 4" wafers. It includes solid source effusion cells as well as valved cracker sources.
- MBE – NexGEN Gen II
- The Osemi NexGEN Molecular Beam Epitaxy System allows III-V growth on 2" to 4" wafers. It includes solid source effusion cells as well as valved cracker sources.
- MBE – SVT
- The SVT Molecular Beam Epitaxy system allows III-V growth on 2”-3” wafers (up to 6 at a time). Includes 7 solid source effusion cells and valved cracker source, with in situ characterization.
- UHV CVD-300
- The Low Temperature CVD system is a Leybold Sirius Low-Temperature Epitaxy UHV CVD-300 system, capable of growing group IV semiconductors on 3 to 8” substrates.
- Samco PD220
- Plasma enhanced chemical vapor deposition system system deposits silicon-based thin films (a-Si:H, SiOx, SiOxNy, and SiN) for research applications.
- CHA SE 1000RAP Electron Beam (E-beam) Evaporator
- The E-beam evaporator is used to deposit metals and dielectrics in thicknesses from angstroms to microns. It features several pockets and can accommodate up to 28 four inch wafers.
- BOC-Edwards Auto 306 Electron Beam evaporation system
- The E-Beam Evaporator is a system designed for the deposition of thin metal films, typically ranging in depth from a few nanometers to a few hundred nanometers. A sensor crystal, calibrated for the target material, monitors the rate of deposition.
- Thermco Mini-Brute MB-80 Furnaces
- The furnaces are used for diffusion and oxidation of 2” to 4”silicon wafers. They are designated for Phosphorus Diffusion, Boron Diffusion, Wet Oxidation and Dry Oxidation.
- AG Associates Heat Pulse 210T Rapid Thermal Processor (RTP)
- The RTP a.k.a. Rapid Thermal Annealer (RTA) is commonly used to anneal metal contacts on semiconductor devices at temperatures between 200-1200°C.
