Research Centers & Facilities
Return to Research Overview
Nanofabrication Facility
Capabilities & Equipment > Deposition Systems
Thermco Mini-Brute MB-80 Furnaces
The furnaces are used for diffusion and oxidation of silicon wafers up to four inches in diameter. Each camber is controlled with TymPlex/TymEdit software. The software in turn controls each furnace’s Eurotherm for temperature monitoring and mass flow controllers (MFCs) for gas flow monitoring. The Eurotherms monitor the temperature between 200-1200oC by sensing three thermocouples positioned within and three outside the furnace. Nitrogen and oxygen gas flow are controlled by MFCs to rates between 0-5 sLPM.
Thermco Mini-Brute MB-80 Furnaces
Silicon solar cells fabricated by planar processing techniques. a) n-doped silicon diffused in phosphorus diffusion furnace. b) silicon dioxide grown via wet oxidation.
Phosphorus Diffusion Furnace
This furnace dopes silicon n-type. Set up for POCl3 diffusions. Temperature of the POCl3 is controlled by a Schumacher Source Temperature Controller (STC) in the range of 5-50 oC ±0.3 oC.
Boron Diffusion Furnace
This furnace doped silicon p-type. A BN solid source serves as the dopant source in this set up.
Wet Oxidation Furnace
Thick oxides are grown flowing oxygen through a heated water bubbler. Temperature of the water is maintained by a PID controller.
Dry Oxidation Furnace
High quality oxide layers are formed by flowing pure oxygen or in conjunction with Trans-LC (Trans-Dichloroethylene). Temperature of the Trans-LC is controlled by a Schumacher Absolute Temperature Control System between 10-22oC ±0.2oC.
