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Nanofabrication Facility
Capabilities & Equipment > Lithography
Raith 50 Electron-beam Lithography System
Photo of the Raith 50 EBL system
A selection of devices patterned using this lithography system.
The Raith 50 electron-beam lithography system is a full-featured lithography tool for patterning devices with features smaller than 100 nm. The system is also a fully functional scanning electron microscope.
Features:
- Interferometrically monitored sample x-y stage to guarantee <100-nm field stitching accuracy
- Write field sizes of up to 100 µm square with maximum resolution (Larger write fields are possible with some resolution sacrificed.)
- Reads and writes standard CAD file formats (GDS II, DXF)
- LaB6 filament, with a picoammeter for precise beam current measurement
- Recipes developed for exposing PMMA, SU8, PGMEA, HEBS glass
- Grayscale lithography using either direct-write grayscale or HEBS-mask writing
