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Nanofabrication Facility
Capabilities & Equipment > Lithography
Raith e_LiNE Electron-beam Lithography and Nanoengineering Workstation
Photo of the Raith e_LiNE
The Raith e_LiNE system is an ultra high resolution electron beam lithography system and nanoengineering workstation.
Features and Specifications:
- Minimum line width < 20 nm
- Stitching accuracy 40 nm
- Overlay accuracy 40 nm
- Thermal assisted field emission gun
- Cross-over free electron optics delivers excellent low-kV performance with highest beam current density at 2 nm spot size
- Current drift <0.5%/8h
- Beam position stability <300nm/1h
- Six beam apertures for probe current from 5 pA to 20 nA
- Write field size from 500 nm to 2 mm
- Laser interferometer stage with 100 mm by 100 mm travel range and 2 nm resolution achieved by closed-loop piezo-positioning
- 10 MHZ DSP-controlled digital pattern generator
In addition to lithography:
- Gas injection for in situ electron-beam induced deposition (EBID) and etching (EBIE)
- Nanomanipulators
- Fixed-beam-moving-stage lithography
